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High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
ELECTRICAL CHARACTERISTICS (continued)
(V DLY = V EN = V BST_ = V VL_ = 6.5V, V PGND_ = V LX_ = V PWM_ = 0V, T A = -40°C to +85°C , unless otherwise noted. Typical values are
at T A = +25°C.) (Note 1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GATE DRIVER SPECIFICATIONS
V PWM_ = V VL_ ,
sourcing current
V BST_ = 6.5V, I DH_ = -0.1A
1.0
1.6
DH_ Driver Resistance
V PWM_ = 0V,
sinking current
V PWM_ = 0V,
sourcing current
V BST_ = 6.5V, I DH_ = 0.1A
V VL_ = 6.5V, I DL_ = -0.1A
0.7
0.9
1.1
1.5
Ω
DL_ Driver Resistance
V PWM_ = V VL_ ,
sinking current
V VL_ = 6.5V, I DL_ = 0.1A
0.4
0.7
DH_ Rise Time (t rDH )
DH_ Fall Time (t fDH )
DL_ Rise Time (t rDL )
DL_ Fall Time (t fDL )
DH_ Propagation Delay
DL_ Propagation Delay
V PWM_ = V VL_
V PWM_ = 0V
V PWM_ = 0V
V PWM_ = V VL_
V PWM_ falling
(t pDHf )
V PWM_ = V VL _ ,
V DL _ falling (t pDHr )
V PWM_ rising
(t pDLf )
V PWM_ = GND,
LX falling (t pDLr )
V BST_ = 6.5V, 3000pF load
V BST_ = 6.5V, 3000pF load
V VL_ = 6.5V, 3000pF load
V VL_ = 6.5V, 3000pF load
V BST_ = 6.5V
V BST_ - V LX_ = 6.5V
14
9
11
8
20
14
12
16
ns
ns
ns
ns
ns
ns
INTERNAL BOOST DIODE SPECIFICATIONS
On-Resistance
I BST_ = 40mA
6
Ω
THERMAL SHUTDOWN
Thermal Shutdown
Rising temperature, hysteresis = 15°C (typ)
+165
°C
Note 1: Specifications at -40°C guaranteed by design.
_______________________________________________________________________________________
3
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